BAS56 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 5 of 12
NXP Semiconductors
BAS56
High-speed double diode
Tj
=25°C Based on square wave currents.
Tj
=25°C; prior to surge
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Non-repetitive peak forward current as a
function of pulse duration
(1) VR
= 60 V; maximum values
(2) VR
= 60 V; typical values
f=1MHz; Tj
=25°C
Fig 3. Reverse current as a function of junction
temperature
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
mbh279
0
10?1
021
VF
(V)
11010 102
103
4
300
100
200
IF
(mA)
mbg703
10
1
102
IFSM
(A)
tp
(
μs)
mbh282
10
200
0 100
Tj
(
°C)
IR
(μA)
1
10?2
10?1
102
(1)
(2)
mbh283
0102030V
R
(V)
2.0
Cd
(pF)
1.5
0.5
0
1.0
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